Nexperia B.V. Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) BUK7V4R2-40HX

Description
Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance automotive PWM applications. Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity PCB shrinkage through reduced component footprint for 3-phase motor drive Improved system level Rth(j-amb) due to optimized package design Lower parasitic inductance to support higher efficiency Footprint compatibility with LFPAK56D Dual package Applications 12 V automotive systems Powertrain, chassis, body and infotainment applications Brushless or brushed DC motor drive DC-to-DC systems LED lighting
Request a Quote Datasheet
Description
Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance automotive PWM applications. Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity PCB shrinkage through reduced component footprint for 3-phase motor drive Improved system level Rth(j-amb) due to optimized package design Lower parasitic inductance to support higher efficiency Footprint compatibility with LFPAK56D Dual package Applications 12 V automotive systems Powertrain, chassis, body and infotainment applications Brushless or brushed DC motor drive DC-to-DC systems LED lighting
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) - BUK7V4R2-40HX - Nexperia B.V.
Nijmegen, Netherlands
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
BUK7V4R2-40HX
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) BUK7V4R2-40HX
Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance automotive PWM applications. Features and benefits LFPAK56D package with half-bridge configuration enables: Reduced PCB layout complexity PCB shrinkage through reduced component footprint for 3-phase motor drive Improved system level Rth(j-amb) due to optimized package design Lower parasitic inductance to support higher efficiency Footprint compatibility with LFPAK56D Dual package Applications 12 V automotive systems Powertrain, chassis, body and infotainment applications Brushless or brushed DC motor drive DC-to-DC systems LED lighting

Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101.

An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance automotive PWM applications.

Features and benefits

  • LFPAK56D package with half-bridge configuration enables:
    • Reduced PCB layout complexity
    • PCB shrinkage through reduced component footprint for 3-phase motor drive
    • Improved system level Rth(j-amb) due to optimized package design
    • Lower parasitic inductance to support higher efficiency
    • Footprint compatibility with LFPAK56D Dual package

Applications

  • 12 V automotive systems
  • Powertrain, chassis, body and infotainment applications
  • Brushless or brushed DC motor drive
  • DC-to-DC systems
  • LED lighting
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-BUK7V4R2-40HXTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-BUK7V4R2-40HXTR-ND
FET, MOSFET Arrays 1727-BUK7V4R2-40HXTR-ND
Mosfet Array 2 N-Channel (Half Bridge) 40V 98A (Ta) 85W (Ta) Surface Mount LFPAK56D

Mosfet Array 2 N-Channel (Half Bridge) 40V 98A (Ta) 85W (Ta) Surface Mount LFPAK56D

Buy Now Datasheet
FET, MOSFET Arrays - 1727-BUK7V4R2-40HXCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-BUK7V4R2-40HXCT-ND
FET, MOSFET Arrays 1727-BUK7V4R2-40HXCT-ND
Mosfet Array 2 N-Channel (Half Bridge) 40V 98A (Ta) 85W (Ta) Surface Mount LFPAK56D

Mosfet Array 2 N-Channel (Half Bridge) 40V 98A (Ta) 85W (Ta) Surface Mount LFPAK56D

Buy Now Datasheet
FET, MOSFET Arrays - 1727-BUK7V4R2-40HXDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-BUK7V4R2-40HXDKR-ND
FET, MOSFET Arrays 1727-BUK7V4R2-40HXDKR-ND
Mosfet Array 2 N-Channel (Half Bridge) 40V 98A (Ta) 85W (Ta) Surface Mount LFPAK56D

Mosfet Array 2 N-Channel (Half Bridge) 40V 98A (Ta) 85W (Ta) Surface Mount LFPAK56D

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays - 1350576-BUK7V4R2-40HX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
1350576-BUK7V4R2-40HX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays 1350576-BUK7V4R2-40HX
Win Source Part Number: 1350576-BUK7V4R2-40H X Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays Series: Automotive, AEC-Q101, TrenchMOS™ Package: Tape & Reel Standard Package: 1,500 Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Power - Max: 85W (Ta) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 37 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Nexperia USA Inc. Base Product Number: BUK7V4 Current - Continuous Drain (Id) @ 25°C: 98A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V

Win Source Part Number: 1350576-BUK7V4R2-40HX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Standard Package: 1,500
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Power - Max: 85W (Ta)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 37 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Base Product Number: BUK7V4
Current - Continuous Drain (Id) @ 25°C: 98A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V

Buy Now Datasheet
MOSFETs - 2401814P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2401814P
MOSFETs 2401814P
Dual N-channel 40 V, 4.2 mOhm MOSFET

Dual N-channel 40 V, 4.2 mOhm MOSFET

Supplier's Site
MOSFETs - 2401814 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2401814
MOSFETs 2401814
Dual N-channel 40 V, 4.2 mOhm MOSFET

Dual N-channel 40 V, 4.2 mOhm MOSFET

Supplier's Site
MOSFETs - 2401813 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2401813
MOSFETs 2401813
Dual N-channel 40 V, 4.2 mOhm MOSFET

Dual N-channel 40 V, 4.2 mOhm MOSFET

Supplier's Site
Singapore
40V 98A MOSFET Transistor
289-BUK7V4R2-40HX
40V 98A MOSFET Transistor 289-BUK7V4R2-40HX
MOSFET 2N-CH 40V 98A LFPAK56D Product overview: BUK7V4R2-40HX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 98A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 98A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BUK7V4R2-40HX can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 40V 98A LFPAK56D Product overview: BUK7V4R2-40HX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 98A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 98A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BUK7V4R2-40HX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK7V4R2-40HX - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK7V4R2-40HX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK7V4R2-40HX
MOSFET 2N-CH 40V 98A LFPAK56D

MOSFET 2N-CH 40V 98A LFPAK56D

Supplier's Site
FET, MOSFET Arrays - BUK7V4R2-40HX - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
BUK7V4R2-40HX
FET, MOSFET Arrays BUK7V4R2-40HX
BUK7V4R2-40H - DUAL N-CHANNEL 40

BUK7V4R2-40H - DUAL N-CHANNEL 40

Supplier's Site Datasheet
Mosfet, 40V, 98A, 175Deg C, 85W Rohs Compliant Nexperia - 32AJ0261 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 40V, 98A, 175Deg C, 85W Rohs Compliant Nexperia
32AJ0261
Mosfet, 40V, 98A, 175Deg C, 85W Rohs Compliant Nexperia 32AJ0261
MOSFET, 40V, 98A, 175DEG C, 85W ROHS COMPLIANT: YES

MOSFET, 40V, 98A, 175DEG C, 85W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Acme Chip Technology Co., Limited ODG (Origin Data Global) Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK7V4R2-40HX 1727-BUK7V4R2-40HXTR-ND 1350576-BUK7V4R2-40HX 2401814P 289-BUK7V4R2-40HX BUK7V4R2-40HX BUK7V4R2-40HX 32AJ0261
Product Name Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays MOSFETs 40V 98A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays Mosfet, 40V, 98A, 175Deg C, 85W Rohs Compliant Nexperia
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 40 volts 40 volts 40 volts
IDSS 98000 milliamps 98000 milliamps
VGS(off) 20 volts
PD 85 milliwatts 85 milliwatts
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