80 V, P-channel Trench MOSFET in an LFPAK56 (SOT669) surface-mounted plastic package, designed for automotive applications and qualified to AEC-Q101. It has a maximum drain-source voltage of -80 V, continuous drain current of -35 A at 25 °C, and total power dissipation of 150 W. Drain-source on-state resistance is 42 to 55 mΩ at V_GS = -10 V and I_D = -7 A. The junction temperature rating is 175 °C, with thermal resistance from junction to mounting base of 0.8 to 1 K/W. The device supports reverse battery protection, power management, high-side load switching, and motor drive applications.
P-channel enhancement mode Field-Effect Transistor (FET) in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
BUK6Y55-80P/SOT669/L
BUK6Y55-80P/SOT669/L
BUK6Y55-80P/SOT669/L
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | BUK6Y55-80PX | 1727-BUK6Y55-80PXTR-ND |
| Product Name | 80 V, P-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | -80 volts | |
| IDSS | -35000 milliamps | |
| VGS(off) | 20 volts | |
| PD | 150 milliwatts |
