Nexperia B.V. 30 V, N-channel Trench MOSFET BUK6D16-30EX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Extended temperature range Tj = 175 °C Trench MOSFET technology Side wettable flanks for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - BUK6D16-30EX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-BUK6D16-30EXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK6D16-30EXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK6D16-30EXCT-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Extended temperature range Tj = 175 °C Trench MOSFET technology Side wettable flanks for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
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Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - BUK6D16-30EX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
BUK6D16-30EX
30 V, N-channel Trench MOSFET BUK6D16-30EX
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Extended temperature range Tj = 175 °C Trench MOSFET technology Side wettable flanks for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Extended temperature range Tj = 175 °C
  • Trench MOSFET technology
  • Side wettable flanks for optical solder inspection
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BUK6D16-30EXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6D16-30EXTR-ND
Single FETs, MOSFETs 1727-BUK6D16-30EXTR-ND
MOS DISCRETES

MOS DISCRETES

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK6D16-30EXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6D16-30EXDKR-ND
Single FETs, MOSFETs 1727-BUK6D16-30EXDKR-ND
MOS DISCRETES

MOS DISCRETES

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK6D16-30EXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6D16-30EXCT-ND
Single FETs, MOSFETs 1727-BUK6D16-30EXCT-ND
MOS DISCRETES

MOS DISCRETES

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BUK6D16-30EX 1727-BUK6D16-30EXTR-ND
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 8400 milliamps
VGS(off) 20 volts
PD 2.3 milliwatts
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