N-channel enhancement mode Trench MOSFET in a leadless DFN2020MD-6 (SOT1220) package measuring 2 mm x 2 mm x 0.65 mm, rated for a drain-source voltage of 30 V and a maximum junction temperature of 175 °C, with a drain current of 23 A at 25 °C and an on-state resistance of 13.4 mΩ at 10 V gate-source voltage. The device features side wettable flanks for optical solder inspection and is AEC-Q101 qualified for automotive applications.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | BUK6D16-30EX | 1727-BUK6D16-30EXTR-ND |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 30 volts | |
| IDSS | 8400 milliamps | |
| VGS(off) | 20 volts | |
| PD | 2.3 milliwatts |
