Nexperia B.V. 80 V, P-channel Trench MOSFET BUK6D140-80PX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
  • 80 V, P-channel Trench MOSFET - BUK6D140-80PX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-BUK6D140-80PXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK6D140-80PXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK6D140-80PXTR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
80 V, P-channel Trench MOSFET - BUK6D140-80PX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
80 V, P-channel Trench MOSFET
BUK6D140-80PX
80 V, P-channel Trench MOSFET BUK6D140-80PX
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Trench MOSFET technology
  • Extended temperature range Tj = 175 °C
  • Side wettable flanks for optical solder inspection
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BUK6D140-80PXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6D140-80PXDKR-ND
Single FETs, MOSFETs 1727-BUK6D140-80PXDKR-ND
BUK6D140-80P/SOT1220 /DFN2020MD

BUK6D140-80P/SOT1220/DFN2020MD

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK6D140-80PXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6D140-80PXCT-ND
Single FETs, MOSFETs 1727-BUK6D140-80PXCT-ND
BUK6D140-80P/SOT1220 /DFN2020MD

BUK6D140-80P/SOT1220/DFN2020MD

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK6D140-80PXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6D140-80PXTR-ND
Single FETs, MOSFETs 1727-BUK6D140-80PXTR-ND
BUK6D140-80P/SOT1220 /DFN2020MD

BUK6D140-80P/SOT1220/DFN2020MD

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BUK6D140-80PX 1727-BUK6D140-80PXDKR-ND
Product Name 80 V, P-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -80 volts
IDSS -7700 milliamps
VGS(off) 20 volts
PD 19 milliwatts
Unlock Full Specs
to access all available technical data