The BUK6D125-60E is an N-channel enhancement mode MOSFET designed for medium power applications. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 7.4A at a gate-source voltage of 10V. The device is housed in a compact DFN2020MD-6 (SOT1220) package, which is thermal enhanced and ultra-thin, measuring 2mm x 2mm x 0.65mm. This MOSFET is AEC-Q101 qualified, making it suitable for automotive applications. It has a total power dissipation capability of 15W and offers a low on-state resistance of 92 to 125 mΩ at specified conditions. The device also provides ESD protection greater than 2 kV HBM and operates over an extended temperature range of -55°C to 175°C. The BUK6D125-60E is RoHS compliant, ensuring it meets environmental standards. Its applications include LED lighting, high-speed line drivers, low-side load switching, and various switching circuits.
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 2.7A (Ta), 7.4A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6
N-Channel 60V 2.7A (Ta), 7.4A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6
N-Channel 60V 2.7A (Ta), 7.4A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6
Win Source Part Number: 1381639-BUK6D125-60E
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 3,000 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Base Product Number: BUK6D125
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
MOSFET N-CH 60V 2.7A/7.4A 6DFN Product overview: BUK6D125-60EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.7A, 7.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.7A, 7.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK6D125-60EX can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 2.7A/7.4A 6DFN
MOSFET BUK6D125-60E/SOT1220
MOSFET N-CH 60V 2.7A/7.4A 6DFN
MOSFET, AEC-Q101, N-CH, 60V, 7.4A, 15W ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK6D125-60EX | 1727-BUK6D125-60EXTR-ND | 1381639-BUK6D125-60EX | 278-BUK6D125-60EX | BUK6D125-60EX | BUK6D125-60EX | BUK6D125-60EX | 17AH8844 |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | 60V 2.7A 7.4A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 60V, 7.4A, 15W Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| IDSS | 7400 milliamps | 2700 milliamps | ||||||
| VGS(off) | 20 volts | |||||||
| PD | 15 milliwatts | 2000 to 15000 milliwatts | 15 milliwatts | 2000 milliwatts |
