N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm, using Trench MOSFET technology. It has a drain-source voltage rating of 30 V, a continuous drain current of 8.3 A at 25 °C, and a total power dissipation of 7.5 W. The junction temperature ranges from -55 °C to 175 °C. It features side wettable flanks for optical solder inspection, ESD protection exceeding 1 kV HBM (class H1C), and is AEC-Q101 qualified for automotive applications.
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
SMALL SIGNAL MOSFET FOR AUTOMOTI
SMALL SIGNAL MOSFET FOR AUTOMOTI
SMALL SIGNAL MOSFET FOR AUTOMOTI
30 V, N-channel Trench MOSFET
MOSFET, AEC-Q101, N-CH, 30V, DFN2020MD ROHS COMPLIANT: YES
SMALL SIGNAL MOSFET FOR AUTOMOTI
| Nexperia B.V. | DigiKey | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BUK4D60-30X | 1727-BUK4D60-30XTR-ND | BUK4D60-30X | 82AH4501 | BUK4D60-30X |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 30V, Dfn2020Md Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 30 volts | ||||
| IDSS | 8300 milliamps | ||||
| VGS(off) | 12 volts | ||||
| PD | 7.5 milliwatts |
