Nexperia B.V. 20 V, P-channel Trench MOSFET BUK4D38-20PH

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) Trench MOSFET technology AEC-Q101 qualified Applications DC to DC conversion High-speed line driver High-side load switch Switching circuits
  • 20 V, P-channel Trench MOSFET - BUK4D38-20PH - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-BUK4D38-20PHTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK4D38-20PHCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK4D38-20PHDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) Trench MOSFET technology AEC-Q101 qualified Applications DC to DC conversion High-speed line driver High-side load switch Switching circuits
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Suppliers

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Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - BUK4D38-20PH - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
BUK4D38-20PH
20 V, P-channel Trench MOSFET BUK4D38-20PH
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) Trench MOSFET technology AEC-Q101 qualified Applications DC to DC conversion High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Extended temperature range Tj = 175 °C
  • Side wettable flanks for optical solder inspection
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
  • Trench MOSFET technology
  • AEC-Q101 qualified

Applications

  • DC to DC conversion
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BUK4D38-20PHTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK4D38-20PHTR-ND
Single FETs, MOSFETs 1727-BUK4D38-20PHTR-ND
SMALL SIGNAL MOSFETS FOR AUTOMOT

SMALL SIGNAL MOSFETS FOR AUTOMOT

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK4D38-20PHCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK4D38-20PHCT-ND
Single FETs, MOSFETs 1727-BUK4D38-20PHCT-ND
SMALL SIGNAL MOSFETS FOR AUTOMOT

SMALL SIGNAL MOSFETS FOR AUTOMOT

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK4D38-20PHDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK4D38-20PHDKR-ND
Single FETs, MOSFETs 1727-BUK4D38-20PHDKR-ND
SMALL SIGNAL MOSFETS FOR AUTOMOT

SMALL SIGNAL MOSFETS FOR AUTOMOT

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BUK4D38-20PH 1727-BUK4D38-20PHTR-ND
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -18000 milliamps
VGS(off) 12 volts
PD 19 milliwatts
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