Nexperia B.V. 60 V, N-channel Trench MOSFET BSS138AKM-QYL

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It has a drain-source voltage rating of 60 V, a continuous drain current of 350 mA at 25 °C, and a drain-source on-state resistance of 2.2 Ω at 10 V gate-source voltage and 100 mA drain current. The device is AEC-Q101 qualified and includes ESD protection with a maximum HBM rating of 500 V. It is suitable for relay driver, high-speed line driver, low-side load switch, and switching circuit applications.