Nexperia B.V. 20 V, P-channel Trench MOSFET BSH205G2VL

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It has a drain-source voltage rating of -20 V, a gate-source voltage rating of ±8 V, and a continuous drain current of -2 A at 25 °C ambient temperature. The on-state resistance is 120 to 170 mΩ at -4.5 V gate-source voltage and -2 A drain current. Total power dissipation is 480 mW on a standard FR4 PCB and up to 890 mW with a 6 cm² drain pad. The junction temperature ranges from -55 °C to 150 °C. It is AEC-Q101 qualified and intended for applications including relay drivers, high-speed line drivers, high-side load switches, and switching circuits.