Nexperia B.V. 20 V, P-channel Trench MOSFET BSH205G2AR

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Trench MOSFET technology Very fast switching AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
  • 20 V, P-channel Trench MOSFET - BSH205G2AR - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-BSH205G2ARDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BSH205G2ARCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BSH205G2ARTR-ND - DigiKey
    DigiKey
  • Mosfet, P-Ch, 20V, 2.6A, To-236Ab Rohs Compliant Nexperia - 92AH8041 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSH205G2AR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single FETs, MOSFETs - BSH205G2AR - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Trench MOSFET technology Very fast switching AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - BSH205G2AR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
BSH205G2AR
20 V, P-channel Trench MOSFET BSH205G2AR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Trench MOSFET technology Very fast switching AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Extended temperature range Tj = 175 °C
  • Trench MOSFET technology
  • Very fast switching
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BSH205G2ARDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH205G2ARDKR-ND
Single FETs, MOSFETs 1727-BSH205G2ARDKR-ND
P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB

P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BSH205G2ARCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH205G2ARCT-ND
Single FETs, MOSFETs 1727-BSH205G2ARCT-ND
P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB

P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BSH205G2ARTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BSH205G2ARTR-ND
Single FETs, MOSFETs 1727-BSH205G2ARTR-ND
P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB

P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Mosfet, P-Ch, 20V, 2.6A, To-236Ab Rohs Compliant Nexperia - 92AH8041 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 20V, 2.6A, To-236Ab Rohs Compliant Nexperia
92AH8041
Mosfet, P-Ch, 20V, 2.6A, To-236Ab Rohs Compliant Nexperia 92AH8041
MOSFET, P-CH, 20V, 2.6A, TO-236AB ROHS COMPLIANT: YES

MOSFET, P-CH, 20V, 2.6A, TO-236AB ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSH205G2AR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSH205G2AR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSH205G2AR
MOSFET P-CH 20V 2.6A TO236AB

MOSFET P-CH 20V 2.6A TO236AB

Supplier's Site
Single FETs, MOSFETs - BSH205G2AR - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSH205G2AR
Single FETs, MOSFETs BSH205G2AR
MOSFET P-CH 20V 2.6A TO236AB

MOSFET P-CH 20V 2.6A TO236AB

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSH205G2AR 1727-BSH205G2ARDKR-ND 92AH8041 BSH205G2AR BSH205G2AR
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs Mosfet, P-Ch, 20V, 2.6A, To-236Ab Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts 20 volts
IDSS -2600 milliamps 2600 milliamps
VGS(off) 8 volts
PD 610 milliwatts 610 milliwatts
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