P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The device has a drain-source voltage rating of -20 V, a maximum drain current of -2.6 A at -4.5 V gate-source voltage, and a drain-source on-state resistance of 97 to 118 mΩ at 25 °C. It operates with a junction temperature range of -55 °C to 175 °C, is qualified to AEC-Q101, and has a total power dissipation of 610 mW at 25 °C on a standard footprint.
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB
P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB
P-Channel 20V 2.6A (Ta) 610mW (Ta), 10W (Tc) Surface Mount TO-236AB
MOSFET, P-CH, 20V, 2.6A, TO-236AB ROHS COMPLIANT: YES
MOSFET P-CH 20V 2.6A TO236AB
MOSFET P-CH 20V 2.6A TO236AB
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSH205G2AR | 1727-BSH205G2ARDKR-ND | 92AH8041 | BSH205G2AR | BSH205G2AR |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, P-Ch, 20V, 2.6A, To-236Ab Rohs Compliant Nexperia | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | -20 volts | 20 volts | |||
| IDSS | -2600 milliamps | 2600 milliamps | |||
| VGS(off) | 8 volts | ||||
| PD | 610 milliwatts | 610 milliwatts |
