Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
Applications
P-Channel JFET, D-MOS, Logic Level, TO-236, 3-Pin Product overview: BSH203,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSH203,215 can be used for catalog matching and distributor lookup.
P-Channel 30V 470mA (Ta) 417mW (Ta) Surface Mount TO-236AB
P-Channel 30V 470mA (Ta) 417mW (Ta) Surface Mount TO-236AB
P-Channel 30V 470mA (Ta) 417mW (Ta) Surface Mount TO-236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1024377-BSH203,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 417mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 470mA (Ta)
Gate-Source Threshold Voltage: 680mV @ 1mA
Max Gate Charge: 2.2nC @ 4.5V
Max Input Capacitance: 110pF @ 24V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 900 mOhm @ 280mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
MOSFET P-Channel 30V 0.47A TO236AB
MOSFET P-Channel 30V 0.47A TO236AB
MOSFET P-Channel 30V 0.47A TO236AB
MOSFET P-CH 30V 470MA TO236AB
MOSFET, P CHANNEL, 30V, 0.47A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:470mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:680mV RoHS Compliant: Yes
30V 470mA 900mΩ@4.5V,280mA 417mW 680mV@1mA P Channel SOT-23 MOSFETs ROHS
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSH203,215 | 278-BSH203,215 | 1727-BSH203,215DKR-ND | 1024377-BSH203,215 | 7258366 | 7258366P | BSH203,215 | 75T6360 | BSH203,215 |
| Product Name | P-channel vertical D-MOS logic level FET | P-Channel MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH203,215 | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, 30V, 0.47A, Sot23; Channel Type Nexperia | Triode/MOS Tube/Transistor >> MOSFETs |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; TO-236AB (SOT23) | SOT23; Sot-23 (to-236ab) | SOT23; SOT-23 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | SOT23 | |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| PD | 417 milliwatts | 417 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
