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Nexperia B.V. 45 V, 100 mA PNP general-purpose transistor BC857AMB,315

Description
PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: BC847AMB Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 Low package height of 0.37 mm AEC-Q101 qualified Applications General-purpose switching and amplification Mobile applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
45 V, 100 mA PNP general-purpose transistor - BC857AMB,315 - Nexperia B.V.
Nijmegen, Netherlands
45 V, 100 mA PNP general-purpose transistor
BC857AMB,315
45 V, 100 mA PNP general-purpose transistor BC857AMB,315
PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: BC847AMB Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 Low package height of 0.37 mm AEC-Q101 qualified Applications General-purpose switching and amplification Mobile applications

PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

NPN complement: BC847AMB

Features and benefits

  • Leadless ultra small SMD plastic package
  • Power dissipation comparable to SOT23
  • Low package height of 0.37 mm
  • AEC-Q101 qualified

Applications

  • General-purpose switching and amplification
  • Mobile applications
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC857AMB,315 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC857AMB,315
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC857AMB,315
TRANS PNP 45V 0.1A DFN1006B-3

TRANS PNP 45V 0.1A DFN1006B-3

Supplier's Site
 - BC857AMB,315 - Rochester Electronics
Newburyport, MA, United States
TRANSISTORS>100MHZ

TRANSISTORS>100MHZ

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC857AMB,315 - 1022496-BC857AMB,315 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors (BJT) - Single - BC857AMB,315
1022496-BC857AMB,315
TRANSISTORS - Transistors (BJT) - Single - BC857AMB,315 1022496-BC857AMB,315
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1022496-BC857AMB,315 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-DFN1006B (0.6x1) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 125 @ 2mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1022496-BC857AMB,315
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-DFN1006B (0.6x1)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 125 @ 2mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Supplier's Site
Discrete Semiconductor - BC857AMB,315 - LIXINC Electronics Co., Limited
Hong Kong, China
Discrete Semiconductor
BC857AMB,315
Discrete Semiconductor BC857AMB,315
TRANSISTORS>100MHZ

TRANSISTORS>100MHZ

Supplier's Site Datasheet
Single Bipolar Transistors - BC857AMB,315-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC857AMB,315-ND
Single Bipolar Transistors BC857AMB,315-ND
Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 250mW Surface Mount DFN1006B-3

Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 250mW Surface Mount DFN1006B-3

Supplier's Site Datasheet
Transistor, Bipolar Rohs Compliant Nexperia - 28AK6439 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar Rohs Compliant Nexperia
28AK6439
Transistor, Bipolar Rohs Compliant Nexperia 28AK6439
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. Shenzhen Shengyu Electronics Technology Limited Rochester Electronics Win Source Electronics LIXINC Electronics Co., Limited DigiKey Newark, An Avnet Company
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BC857AMB,315 BC857AMB,315 BC857AMB,315 1022496-BC857AMB,315 BC857AMB,315 BC857AMB,315-ND 28AK6439
Product Name 45 V, 100 mA PNP general-purpose transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANSISTORS - Transistors (BJT) - Single - BC857AMB,315 Discrete Semiconductor Single Bipolar Transistors Transistor, Bipolar Rohs Compliant Nexperia
Polarity PNP PNP; PNP PNP
Transistor Grade / Operating Range Automotive Automotive
Package Type SOT883B AEC-Q101 SOT883B SOT3; 3-DFN1006B (0.6x1) 3-XFDFN 3-XFDFN TO-3
IC(max) -100 milliamps 100 milliamps 100 milliamps
VCEO -45 volts 45 volts 45 volts
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