NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks, measuring 1.1 mm × 1.0 mm × 0.48 mm. It has a collector-emitter voltage rating of 65 V, a continuous collector current of 100 mA, and a peak collector current of 200 mA for pulses up to 1 ms. The total power dissipation is 340 mW on a standard FR4 PCB with 35 µm copper. The DC current gain (hFE) ranges from 200 to 450 for the BC846BQB-Q variant. The device is qualified to AEC-Q101 and suitable for automotive applications.
NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.
Table 1.Product overview
Type number
-
Package
-
PNP complement:
Nexperia
-
JEDEC
BC846AQB-Q
SOT8015
MO-340BA
BC856AQB-Q
BC846BQB-Q
BC856BQB-Q
Features and benefits
Applications
TRANS NPN 65V 0.1A DFN1110D-3
TRANS NPN 65V 0.1A DFN1110D-3
TRANS NPN 65V 0.1A DFN1110D-3
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors |
| Product Number | BC846BQB-QZ | 1727-BC846BQB-QZTR-ND |
| Product Name | 65 V, 100 mA NPN general-purpose transistor | Single Bipolar Transistors |
| Package Type | SOT8015 SOT8015 | 3-XDFN Exposed Pad |
| IC(max) | 100 milliamps | |
| VCEO | 65 volts | |
| PD | 340 milliwatts |
