Nexperia B.V. Low-leakage double diode BAV170-QR

Description
Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low-leakage current applications in surface mounted circuits.
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Description
Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low-leakage current applications in surface mounted circuits.
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Suppliers

Company
Product
Description
Supplier Links
Low-leakage double diode - BAV170-QR - Nexperia B.V.
Nijmegen, Netherlands
Low-leakage double diode
BAV170-QR
Low-leakage double diode BAV170-QR
Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low-leakage current applications in surface mounted circuits.

Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration.

Features and benefits

  • Plastic SMD package
  • Low leakage current: typ. 3 pA
  • Switching time: typ. 0.8 us
  • Continuous reverse voltage: max. 75 V
  • Repetitive peak reverse voltage: max. 85 V
  • Repetitive peak forward current: max. 500 mA.
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Low-leakage current applications in surface mounted circuits.
Supplier's Site Datasheet
Diode Arrays - 1727-BAV170-QRDKR-ND - DigiKey
Thief River Falls, MN, United States
DIODE ARRAY GP 75V 215MA TO236AB

DIODE ARRAY GP 75V 215MA TO236AB

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Diode Arrays - 1727-BAV170-QRTR-ND - DigiKey
Thief River Falls, MN, United States
DIODE ARRAY GP 75V 215MA TO236AB

DIODE ARRAY GP 75V 215MA TO236AB

Buy Now Datasheet
Diode Arrays - 1727-BAV170-QRCT-ND - DigiKey
Thief River Falls, MN, United States
DIODE ARRAY GP 75V 215MA TO236AB

DIODE ARRAY GP 75V 215MA TO236AB

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - BAV170-QR - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - Rectifiers
BAV170-QR
Discrete Semiconductor Products - Diodes - Rectifiers BAV170-QR
DIODE ARRAY GP 75V 215MA TO236AB

DIODE ARRAY GP 75V 215MA TO236AB

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Acme Chip Technology Co., Limited
Product Category Diodes Diode Arrays Rectifiers
Product Number BAV170-QR 1727-BAV170-QRDKR-ND BAV170-QR
Product Name Low-leakage double diode Diode Arrays Discrete Semiconductor Products - Diodes - Rectifiers
Diode Applications Low Leakage
RoHS Compliant RoHS
VF 0.9000 to 9.00E-4 volts 1.25 volts
IF 215 mA
VR 75 volts
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