Nexperia B.V. General purpose diode BAS321-QF

General purpose diode fabricated in planar technology and encapsulated in a very small SOD323 (SC-76) plastic package.

Features and benefits

• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 200 V
• Repetitive peak reverse voltage: max. 250 V
• Repetitive peak forward current: max. 625 mA
• Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

• General purpose switching in surface mounted circuits

Diode Standard 200V 250mA (DC) Surface Mount SOD-323

DIODE GEN PURP 200V 250MA SOD323 Product overview: BAS321-QF from Nexperia is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 250MA. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 200V, 250MA, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-BAS321-QF can be used for catalog matching and distributor lookup.

Win Source Part Number: 1368153-BAS321-QF
Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Package: Tape & Reel
Fake Threat In the Open Market: 42 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Product Status: Active
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Base Product Number: BAS321
Technology: Standard
Mounting Type: Surface Mount
HTSUS: 8541.10.0070
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Operating Temperature - Junction: 150°C

DIODE GEN PURP 200V 250MA SOD323