Nexperia B.V. Low-leakage triple switching diode BAS116VY-QX

Description
Epitaxial, medium-speed switching, electrically isolated triple diode in in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low leakage current: max. 5 nA Switching time: typical 0.8 µs Continuous reverse voltage: maximum 75 V Repetitive peak reverse voltage: maximum 85 V Repetitive peak forward current: maximum 500 mA Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low-leakage current applications in surface mounted circuits
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Description
Epitaxial, medium-speed switching, electrically isolated triple diode in in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low leakage current: max. 5 nA Switching time: typical 0.8 µs Continuous reverse voltage: maximum 75 V Repetitive peak reverse voltage: maximum 85 V Repetitive peak forward current: maximum 500 mA Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low-leakage current applications in surface mounted circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Low-leakage triple switching diode - BAS116VY-QX - Nexperia B.V.
Nijmegen, Netherlands
Low-leakage triple switching diode
BAS116VY-QX
Low-leakage triple switching diode BAS116VY-QX
Epitaxial, medium-speed switching, electrically isolated triple diode in in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low leakage current: max. 5 nA Switching time: typical 0.8 µs Continuous reverse voltage: maximum 75 V Repetitive peak reverse voltage: maximum 85 V Repetitive peak forward current: maximum 500 mA Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low-leakage current applications in surface mounted circuits

Epitaxial, medium-speed switching, electrically isolated triple diode in in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Low leakage current: max. 5 nA
  • Switching time: typical 0.8 µs
  • Continuous reverse voltage: maximum 75 V
  • Repetitive peak reverse voltage: maximum 85 V
  • Repetitive peak forward current: maximum 500 mA
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Low-leakage current applications in surface mounted circuits
Supplier's Site Datasheet
Diode Arrays - 1727-BAS116VY-QXTR-ND - DigiKey
Thief River Falls, MN, United States
DIODE ARRAY GP 75V 180MA 6-TSSOP

DIODE ARRAY GP 75V 180MA 6-TSSOP

Buy Now Datasheet
Diode Arrays - 1727-BAS116VY-QXCT-ND - DigiKey
Thief River Falls, MN, United States
DIODE ARRAY GP 75V 180MA 6-TSSOP

DIODE ARRAY GP 75V 180MA 6-TSSOP

Buy Now Datasheet
Diode Arrays - 1727-BAS116VY-QXDKR-ND - DigiKey
Thief River Falls, MN, United States
DIODE ARRAY GP 75V 180MA 6-TSSOP

DIODE ARRAY GP 75V 180MA 6-TSSOP

Buy Now Datasheet
 - BAS116VY-QX - Rochester Electronics
Newburyport, MA, United States
Low-leakage triple switching diode

Low-leakage triple switching diode

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics
Product Category Diodes Diode Arrays Diodes
Product Number BAS116VY-QX 1727-BAS116VY-QXTR-ND BAS116VY-QX
Product Name Low-leakage triple switching diode Diode Arrays
Diode Applications Switching; Low Leakage Switching
RoHS Compliant RoHS RoHS
VF 0.9000 to 9.00E-4 volts
IF 180 mA
VR 75 volts
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