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Nexperia B.V. Low-leakage dual switching diode BAS116DY-QX

Description
Epitaxial, medium-speed switching, electrically isolated dual diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. Features and benefits Low leakage current: maximum 5 nA Switching time: typical 0.8 µs Continuous reverse voltage: maximum 75 V Repetitive peak reverse voltage: maximum 85 V Repetitive peak forward current: maximum 1 A Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low-leakage current applications in surface mounted circuits
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Low-leakage dual switching diode - BAS116DY-QX - Nexperia B.V.
Nijmegen, Netherlands
Low-leakage dual switching diode
BAS116DY-QX
Low-leakage dual switching diode BAS116DY-QX
Epitaxial, medium-speed switching, electrically isolated dual diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. Features and benefits Low leakage current: maximum 5 nA Switching time: typical 0.8 µs Continuous reverse voltage: maximum 75 V Repetitive peak reverse voltage: maximum 85 V Repetitive peak forward current: maximum 1 A Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low-leakage current applications in surface mounted circuits

Epitaxial, medium-speed switching, electrically isolated dual diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Low leakage current: maximum 5 nA
  • Switching time: typical 0.8 µs
  • Continuous reverse voltage: maximum 75 V
  • Repetitive peak reverse voltage: maximum 85 V
  • Repetitive peak forward current: maximum 1 A
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Low-leakage current applications in surface mounted circuits
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Technical Specifications

  Nexperia B.V.
Product Category Diodes
Product Number BAS116DY-QX
Product Name Low-leakage dual switching diode
Diode Applications Switching; Low Leakage
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