Nexperia B.V. High-voltage switching dual diode BAS101S-QR

Description
High-voltage switching dual diode, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Features and benefits High switching speed: trr ≤ 50 ns Low leakage current Repetitive peak reverse voltage: VRRM ≤ 300 Low capacitance: Cd ≤ 2 pF Reverse voltage: VR ≤ 300 V Small SMD plastic package Qualified according to AEC-Q101 and recommended for use in automotive applications Applications High-speed switching High-voltage switching Voltage clamping Reverse polarity protection
  • High-voltage switching dual diode - BAS101S-QR - Nexperia B.V.
    Nexperia B.V.
  • Diode Arrays - 1727-BAS101S-QRDKR-ND - DigiKey
    DigiKey
  • Diode Arrays - 1727-BAS101S-QRCT-ND - DigiKey
    DigiKey
  • Diode Arrays - 1727-BAS101S-QRTR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
High-voltage switching dual diode, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Features and benefits High switching speed: trr ≤ 50 ns Low leakage current Repetitive peak reverse voltage: VRRM ≤ 300 Low capacitance: Cd ≤ 2 pF Reverse voltage: VR ≤ 300 V Small SMD plastic package Qualified according to AEC-Q101 and recommended for use in automotive applications Applications High-speed switching High-voltage switching Voltage clamping Reverse polarity protection
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Suppliers

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Product
Description
Supplier Links
High-voltage switching dual diode - BAS101S-QR - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
High-voltage switching dual diode
BAS101S-QR
High-voltage switching dual diode BAS101S-QR
High-voltage switching dual diode, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Features and benefits High switching speed: trr ≤ 50 ns Low leakage current Repetitive peak reverse voltage: VRRM ≤ 300 Low capacitance: Cd ≤ 2 pF Reverse voltage: VR ≤ 300 V Small SMD plastic package Qualified according to AEC-Q101 and recommended for use in automotive applications Applications High-speed switching High-voltage switching Voltage clamping Reverse polarity protection

High-voltage switching dual diode, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • High switching speed: trr ≤ 50 ns
  • Low leakage current
  • Repetitive peak reverse voltage: VRRM ≤ 300
  • Low capacitance: Cd ≤ 2 pF
  • Reverse voltage: VR ≤ 300 V
  • Small SMD plastic package
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • High-speed switching
  • High-voltage switching
  • Voltage clamping
  • Reverse polarity protection
Supplier's Site Datasheet
Diode Arrays - 1727-BAS101S-QRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Diode Arrays
1727-BAS101S-QRDKR-ND
Diode Arrays 1727-BAS101S-QRDKR-ND
DIODE ARR GP 600V 100MA TO-236AB

DIODE ARR GP 600V 100MA TO-236AB

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Diode Arrays - 1727-BAS101S-QRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Diode Arrays
1727-BAS101S-QRCT-ND
Diode Arrays 1727-BAS101S-QRCT-ND
DIODE ARR GP 600V 100MA TO-236AB

DIODE ARR GP 600V 100MA TO-236AB

Buy Now Datasheet
Diode Arrays - 1727-BAS101S-QRTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Diode Arrays
1727-BAS101S-QRTR-ND
Diode Arrays 1727-BAS101S-QRTR-ND
DIODE ARR GP 600V 100MA TO-236AB

DIODE ARR GP 600V 100MA TO-236AB

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Diodes Diode Arrays
Product Number BAS101S-QR 1727-BAS101S-QRDKR-ND
Product Name High-voltage switching dual diode Diode Arrays
Diode Applications Switching; Protector; High Voltage
RoHS Compliant RoHS
VF 1.1 to 0.0011 volts
IF 200 mA
VR 300 volts
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