Gelest, Inc. TETRAMETHYLSILANE, 99+% SIT7555.0

Description
Additional Properties Hydrolytic Sensitivity 1: no significant reaction with aqueous systems Application Intermediate for ?-SiC:H thin films by PECVD.1 Reference 1. Kim, D. et al. Thin Solid Films 1996, 283, 109. Safety Hazard Info ihl rat, LC50: >5,000 ppm/4H Packaging Under Nitrogen Tetramethylsilane; 4MS; TMS NMR grade Viscosity: 0.4 cSt ?Hcomb: 3,851 kJ/mol ?Hform: -232 kJ/mol ?Hvap: 26.8 kJ/mol ?Hfus: 6.7 kJ/mol Photoionization threshold: 8.1 eV Ce: 1.838 x 10-3 Vapor pressure, 20 °C: 589 mm Critical temperature: 185 °C Critical pressure: 33 atm Heat capacity: 195.2 Jmol-1K-1 Dielectric constant: 1.92 Intermediate for ?-SiC:H thin films by PECVD
  • TETRAMETHYLSILANE, 99+% - SIT7555.0 - Gelest, Inc.
    Gelest, Inc.
Datasheet
Description
Additional Properties Hydrolytic Sensitivity 1: no significant reaction with aqueous systems Application Intermediate for ?-SiC:H thin films by PECVD.1 Reference 1. Kim, D. et al. Thin Solid Films 1996, 283, 109. Safety Hazard Info ihl rat, LC50: >5,000 ppm/4H Packaging Under Nitrogen Tetramethylsilane; 4MS; TMS NMR grade Viscosity: 0.4 cSt ?Hcomb: 3,851 kJ/mol ?Hform: -232 kJ/mol ?Hvap: 26.8 kJ/mol ?Hfus: 6.7 kJ/mol Photoionization threshold: 8.1 eV Ce: 1.838 x 10-3 Vapor pressure, 20 °C: 589 mm Critical temperature: 185 °C Critical pressure: 33 atm Heat capacity: 195.2 Jmol-1K-1 Dielectric constant: 1.92 Intermediate for ?-SiC:H thin films by PECVD
Datasheet

Suppliers

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Product
Description
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TETRAMETHYLSILANE, 99+% - SIT7555.0 - Gelest, Inc.
Gelest, Inc.
Morrisville, PA, United States
TETRAMETHYLSILANE, 99+%
SIT7555.0
TETRAMETHYLSILANE, 99+% SIT7555.0
Additional Properties Hydrolytic Sensitivity 1: no significant reaction with aqueous systems Application Intermediate for ?-SiC:H thin films by PECVD.1 Reference 1. Kim, D. et al. Thin Solid Films 1996, 283, 109. Safety Hazard Info ihl rat, LC50: >5,000 ppm/4H Packaging Under Nitrogen Tetramethylsilane; 4MS; TMS NMR grade Viscosity: 0.4 cSt ?Hcomb: 3,851 kJ/mol ?Hform: -232 kJ/mol ?Hvap: 26.8 kJ/mol ?Hfus: 6.7 kJ/mol Photoionization threshold: 8.1 eV Ce: 1.838 x 10-3 Vapor pressure, 20 °C: 589 mm Critical temperature: 185 °C Critical pressure: 33 atm Heat capacity: 195.2 Jmol-1K-1 Dielectric constant: 1.92 Intermediate for ?-SiC:H thin films by PECVD

Additional Properties


  • Hydrolytic Sensitivity 1: no significant reaction with aqueous systems
    Application
    Intermediate for ?-SiC:H thin films by PECVD.1
    Reference
    1. Kim, D. et al. Thin Solid Films 1996, 283, 109.
    Safety
  • Hazard Info ihl rat, LC50: >5,000 ppm/4H
  • Packaging Under Nitrogen
    Tetramethylsilane; 4MS; TMS
  • NMR grade
  • Viscosity: 0.4 cSt
  • ?Hcomb: 3,851 kJ/mol
  • ?Hform: -232 kJ/mol
  • ?Hvap: 26.8 kJ/mol
  • ?Hfus: 6.7 kJ/mol
  • Photoionization threshold: 8.1 eV
  • Ce: 1.838 x 10-3
  • Vapor pressure, 20 °C: 589 mm
  • Critical temperature: 185 °C
  • Critical pressure: 33 atm
  • Heat capacity: 195.2 Jmol-1K-1
  • Dielectric constant: 1.92
  • Intermediate for ?-SiC:H thin films by PECVD
Supplier's Site Datasheet

Technical Specifications

  Gelest, Inc.
Product Category Organic Chemicals
Product Number SIT7555.0
Product Name TETRAMETHYLSILANE, 99+%
Chemical Formula C 4 H 1 2 Si
CAS Number 75-76-3
Boiling Point 79.88 to 80.06 F (26.6 to 26.7 C)
Flash Point -16.6 F (-27 C)
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