Additional Properties
Hydrolytic Sensitivity 8: reacts rapidly with moisture, water, protic solvents Application Alkylated by aluminum alkyls and Grignards to form R3Sb.1 Reference 1. Thomas, C. et al. Polyhedron 1993, 12, 89. Safety
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Tris(dimethylamino)a
ntimony; Amtimonytris(dimethy
lamide)
Vapor pressure, 30 °C: 0.5 mm
Alkylated by aluminum alkyls and Grignards to form R3Sb
Gelest, Inc.
Done
Datasheet
Description
Additional Properties
Hydrolytic Sensitivity 8: reacts rapidly with moisture, water, protic solvents Application Alkylated by aluminum alkyls and Grignards to form R3Sb.1 Reference 1. Thomas, C. et al. Polyhedron 1993, 12, 89. Safety
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Tris(dimethylamino)a
ntimony; Amtimonytris(dimethy
lamide)
Vapor pressure, 30 °C: 0.5 mm
Alkylated by aluminum alkyls and Grignards to form R3Sb
Additional Properties
Hydrolytic Sensitivity 8: reacts rapidly with moisture, water, protic solvents Application Alkylated by aluminum alkyls and Grignards to form R3Sb.1 Reference 1. Thomas, C. et al. Polyhedron 1993, 12, 89. Safety
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Tris(dimethylamino)a
ntimony; Amtimonytris(dimethy
lamide)
Vapor pressure, 30 °C: 0.5 mm
Alkylated by aluminum alkyls and Grignards to form R3Sb
Additional Properties
Hydrolytic Sensitivity 8: reacts rapidly with moisture, water, protic solvents
Application
Alkylated by aluminum alkyls and Grignards to form R3Sb.1
Reference
1. Thomas, C. et al. Polyhedron 1993, 12, 89.
Safety
Packaging Under Nitrogen
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Tris(dimethylamino)antimony; Amtimonytris(dimethylamide)
Vapor pressure, 30 °C: 0.5 mm
Alkylated by aluminum alkyls and Grignards to form R3Sb
