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Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH50N65C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Features: Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package Advantages: Hard-switching capability High power density Low gate drive requirements Applications: Battery chargers E-Bikes Lamp ballasts Power inverters Power Factor Correction (PFC) circuits Switched-mode power supplies Uninterruptible Power Supplies (UPS) Welding machines
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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH50N65C3 - Littelfuse, Inc.
Chicago, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH50N65C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH50N65C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Features: Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package Advantages: Hard-switching capability High power density Low gate drive requirements Applications: Battery chargers E-Bikes Lamp ballasts Power inverters Power Factor Correction (PFC) circuits Switched-mode power supplies Uninterruptible Power Supplies (UPS) Welding machines

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Features: Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package Advantages: Hard-switching capability High power density Low gate drive requirements Applications: Battery chargers E-Bikes Lamp ballasts Power inverters Power Factor Correction (PFC) circuits Switched-mode power supplies Uninterruptible Power Supplies (UPS) Welding machines

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Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH50N65C3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
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