Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. These IGBTs have breakdown voltage from 650V till 1200V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losse Features: Low Vcesat, low Eon/Eoff High surge current capability and short circuit capability Positive thermal coefficient of Vcesat Applications: Battery Chargers Lamp Ballast Motor Drives Power Inverters Welding Machines Advantages: Hard-switching capabilities High power densities Temperature stability of diode forward voltage VF Low gate drive requirements
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. These IGBTs have breakdown voltage from 650V till 1200V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losse Features: Low Vcesat, low Eon/Eoff High surge current capability and short circuit capability Positive thermal coefficient of Vcesat Applications: Battery Chargers Lamp Ballast Motor Drives Power Inverters Welding Machines Advantages: Hard-switching capabilities High power densities Temperature stability of diode forward voltage VF Low gate drive requirements
