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Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYB82N120C3H1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Features: Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package Advantages: Hard-switching capability High power density Low gate drive requirements Applications: Battery chargers E-Bikes Lamp ballasts Power inverters Power Factor Correction (PFC) circuits Switched-mode power supplies Uninterruptible Power Supplies (UPS) Welding machines
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Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYB82N120C3H1 - Littelfuse, Inc.
Chicago, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYB82N120C3H1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYB82N120C3H1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Features: Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package Advantages: Hard-switching capability High power density Low gate drive requirements Applications: Battery chargers E-Bikes Lamp ballasts Power inverters Power Factor Correction (PFC) circuits Switched-mode power supplies Uninterruptible Power Supplies (UPS) Welding machines

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Features: Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package Advantages: Hard-switching capability High power density Low gate drive requirements Applications: Battery chargers E-Bikes Lamp ballasts Power inverters Power Factor Correction (PFC) circuits Switched-mode power supplies Uninterruptible Power Supplies (UPS) Welding machines

Supplier's Site
 - 8080237 - RS Components, Ltd.
Corby, Northants, United Kingdom
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes. International standard and proprietary high voltage packages Maximum Continuous Collector Current = 164 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 1.04 kW Package Type = PLUS264 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 50kHz Transistor Configuration = Single

The XPTâ„¢ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRDâ„¢ or HiPerFREDâ„¢ diodes. International standard and proprietary high voltage packages
Maximum Continuous Collector Current = 164 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 1.04 kW
Package Type = PLUS264
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 50kHz
Transistor Configuration = Single

Supplier's Site
 - 9201003 - RS Components, Ltd.
Corby, Northants, United Kingdom
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes. International standard and proprietary high voltage packages Maximum Continuous Collector Current = 164 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 1.04 kW Package Type = PLUS264 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 50kHz Transistor Configuration = Single

The XPTâ„¢ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRDâ„¢ or HiPerFREDâ„¢ diodes. International standard and proprietary high voltage packages
Maximum Continuous Collector Current = 164 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 1.04 kW
Package Type = PLUS264
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 50kHz
Transistor Configuration = Single

Supplier's Site
 - 8080237P - RS Components, Ltd.
Corby, Northants, United Kingdom
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes. International standard and proprietary high voltage packages Maximum Continuous Collector Current = 164 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 1.04 kW Package Type = PLUS264 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 50kHz Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

The XPTâ„¢ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRDâ„¢ or HiPerFREDâ„¢ diodes. International standard and proprietary high voltage packages
Maximum Continuous Collector Current = 164 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 1.04 kW
Package Type = PLUS264
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 50kHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
Igbt, Single, N-Ch, 1.2Kv, 164A, To264Aa; Dc Collector Current Ixys Semiconductor - 02AC9851 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, N-Ch, 1.2Kv, 164A, To264Aa; Dc Collector Current Ixys Semiconductor
02AC9851
Igbt, Single, N-Ch, 1.2Kv, 164A, To264Aa; Dc Collector Current Ixys Semiconductor 02AC9851
IGBT, SINGLE, N-CH, 1.2KV, 164A, TO264AA; DC Collector Current:164A; Collector Emitter Saturation Voltage Vce(on):2.75V; Power Dissipation Pd:1.04kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-264AA; No. of RoHS Compliant: Yes

IGBT, SINGLE, N-CH, 1.2KV, 164A, TO264AA; DC Collector Current:164A; Collector Emitter Saturation Voltage Vce(on):2.75V; Power Dissipation Pd:1.04kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-264AA; No. of RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYB82N120C3H1 8080237 02AC9851
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs Igbt, Single, N-Ch, 1.2Kv, 164A, To264Aa; Dc Collector Current Ixys Semiconductor
VCES 1200 volts
VCE(on) 3.2 volts
IC(max) 164 amps 164 amps
tf 93 ns
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