Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 4th generation (GenX4™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 750V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Features: Low Vcesat, low Eon/Eoff, Optimized for medium switching frequencies 10kHz up to 30kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat Applications: Battery Chargers Lamp Ballast Motor Drives Power Inverters Welding Machines Advantages: Hard-switching capabilities High power densities Temperature stability of diode forward voltage VF Low gate drive requirements
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 4th generation (GenX4™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 750V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Features: Low Vcesat, low Eon/Eoff, Optimized for medium switching frequencies 10kHz up to 30kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas （RBSOA） Positive thermal coefficient of Vcesat Applications: Battery Chargers Lamp Ballast Motor Drives Power Inverters Welding Machines Advantages: Hard-switching capabilities High power densities Temperature stability of diode forward voltage VF Low gate drive requirements
