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Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXXH80N65B4H1

Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Features: Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas (RBSOA) Positive thermal coefficient of Vcesat Applications: Battery Chargers Lamp Ballast Motor Drives Power Inverters Welding Machines Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements
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Suppliers

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Description
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Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXXH80N65B4H1 - Littelfuse, Inc.
Chicago, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXXH80N65B4H1
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXXH80N65B4H1
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Features: Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas (RBSOA) Positive thermal coefficient of Vcesat Applications: Battery Chargers Lamp Ballast Motor Drives Power Inverters Welding Machines Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Features: Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas (RBSOA) Positive thermal coefficient of Vcesat Applications: Battery Chargers Lamp Ballast Motor Drives Power Inverters Welding Machines Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements

Supplier's Site Datasheet
 - 1258049 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBT 80A 650V TO247AD - Discrete Semiconductors - IGBT Transistors

IGBT 80A 650V TO247AD - Discrete Semiconductors - IGBT Transistors

Supplier's Site

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXH80N65B4H1 1258049
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
VCE(on) 2.1 volts
IC(max) 160 amps 430 amps
tf 52 ns
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