- Trained on our vast library of engineering resources.

Littelfuse, Inc. 2500V - 4000V NPT (Non-Punch Through) IGBTs IXGK75N250

Description
NPT IGBTs feature square RBSOA and 10 us short circuit withstand capability. They have positive temp coefficient of Vce(sat), ideal for paralleling. They are preferred for motor drive applications. These IGBTs enable the use of a single device in systems whose circuits previously used multiple, cascaded, lowervoltage switches. Such device consolidation reduces the number of power devices, while also improving cost and efficiency by eliminating complex drive and voltage balancing components. In systems whose circuits previously utilized high voltage SCRs, the use of these VHV IGBTs provides the designer with a true switch for easy implementation of signal modulation schemes, thus improving efficiency, simplifying wave shaping, and enabling load disconnection for improved system safety. Traditional high voltage EMRs and discharge relays can also be replaced, reducing system complexity and improving overall reliability. Features: High blocking voltages High peak current capability High power density Low saturation voltage International standard and proprietary ISOPLUSTM packages Applications: Pulser Circuits Capacitor Discharge Circuits High Voltage Power Supplies High Voltage Test Equipment Laser & X-ray Generators
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
2500V - 4000V NPT (Non-Punch Through) IGBTs - IXGK75N250 - Littelfuse, Inc.
Chicago, IL, United States
2500V - 4000V NPT (Non-Punch Through) IGBTs
IXGK75N250
2500V - 4000V NPT (Non-Punch Through) IGBTs IXGK75N250
NPT IGBTs feature square RBSOA and 10 us short circuit withstand capability. They have positive temp coefficient of Vce(sat), ideal for paralleling. They are preferred for motor drive applications. These IGBTs enable the use of a single device in systems whose circuits previously used multiple, cascaded, lowervoltage switches. Such device consolidation reduces the number of power devices, while also improving cost and efficiency by eliminating complex drive and voltage balancing components. In systems whose circuits previously utilized high voltage SCRs, the use of these VHV IGBTs provides the designer with a true switch for easy implementation of signal modulation schemes, thus improving efficiency, simplifying wave shaping, and enabling load disconnection for improved system safety. Traditional high voltage EMRs and discharge relays can also be replaced, reducing system complexity and improving overall reliability. Features: High blocking voltages High peak current capability High power density Low saturation voltage International standard and proprietary ISOPLUSTM packages Applications: Pulser Circuits Capacitor Discharge Circuits High Voltage Power Supplies High Voltage Test Equipment Laser & X-ray Generators

NPT IGBTs feature square RBSOA and 10 us short circuit withstand capability. They have positive temp coefficient of Vce(sat), ideal for paralleling. They are preferred for motor drive applications. These IGBTs enable the use of a single device in systems whose circuits previously used multiple, cascaded, lowervoltage switches. Such device consolidation reduces the number of power devices, while also improving cost and efficiency by eliminating complex drive and voltage balancing components. In systems whose circuits previously utilized high voltage SCRs, the use of these VHV IGBTs provides the designer with a true switch for easy implementation of signal modulation schemes, thus improving efficiency, simplifying wave shaping, and enabling load disconnection for improved system safety. Traditional high voltage EMRs and discharge relays can also be replaced, reducing system complexity and improving overall reliability. Features: High blocking voltages High peak current capability High power density Low saturation voltage International standard and proprietary ISOPLUSTM packages Applications: Pulser Circuits Capacitor Discharge Circuits High Voltage Power Supplies High Voltage Test Equipment Laser & X-ray Generators

Supplier's Site Datasheet
Transistor, Igbt, 2.5Kv, 170A, To-264; Continuous Collector Current Littelfuse - 03AH1131 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Igbt, 2.5Kv, 170A, To-264; Continuous Collector Current Littelfuse
03AH1131
Transistor, Igbt, 2.5Kv, 170A, To-264; Continuous Collector Current Littelfuse 03AH1131
TRANSISTOR, IGBT, 2.5KV, 170A, TO-264; Continuous Collector Current:170A; Collector Emitter Saturation Voltage:3.6V; Power Dissipation:780W; Collector Emitter Voltage Max:2.5kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

TRANSISTOR, IGBT, 2.5KV, 170A, TO-264; Continuous Collector Current:170A; Collector Emitter Saturation Voltage:3.6V; Power Dissipation:780W; Collector Emitter Voltage Max:2.5kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGK75N250 03AH1131
Product Name 2500V - 4000V NPT (Non-Punch Through) IGBTs Transistor, Igbt, 2.5Kv, 170A, To-264; Continuous Collector Current Littelfuse
VCES 2500 volts
VCE(on) 2.7 volts
IC(max) 170 amps
tf 455 ns
Unlock Full Specs
to access all available technical data

Similar Products

1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs - IXYA8N250CHV - Littelfuse, Inc.
Specs
VCES 2500 volts
VCE(on) 4 volts
IC(max) 29 amps
View Details
300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs - IXGX120N60B3 - Littelfuse, Inc.
Specs
VCES 600 volts
VCE(on) 1.8 volts
IC(max) 280 amps
View Details
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFA38N30X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 300 volts
IDSS 38000 milliamps
View Details
2 suppliers
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH100N65A3 - Littelfuse, Inc.
Specs
VCES 650 volts
VCE(on) 1.8 volts
IC(max) 240 amps
View Details