Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN44N100P

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 37 A
Maximum Drain Source Voltage = 1000 V
Maximum Drain Source Resistance = 220 mOhms
Maximum Gate Threshold Voltage = 6.5V
Minimum Gate Threshold Voltage = 3.5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = SOT-227B
Mounting Type = Surface Mount
Pin Count = 4

N-Channel 1000V 37A (Tc) 890W (Tc) Chassis Mount SOT-227B