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Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFN420N10T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications
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Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFN420N10T - Littelfuse, Inc.
Chicago, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFN420N10T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFN420N10T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

Supplier's Site Datasheet
 - 1258043 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFET 420A 100V SOT227 - Discrete Semiconductors - MOSFET Transistors

MOSFET 420A 100V SOT227 - Discrete Semiconductors - MOSFET Transistors

Supplier's Site
Single FETs, MOSFETs - IXFN420N10T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN420N10T-ND
Single FETs, MOSFETs IXFN420N10T-ND
N-Channel 100V 420A (Tc) 1070W (Tc) Chassis Mount SOT-227B

N-Channel 100V 420A (Tc) 1070W (Tc) Chassis Mount SOT-227B

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IXFN420N10T 1258043 IXFN420N10T-ND
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
IDSS 420000 milliamps
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