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Littelfuse, Inc. 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN39N90

Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density
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Suppliers

Company
Product
Description
Supplier Links
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN39N90 - Littelfuse, Inc.
Chicago, IL, United States
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN39N90
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN39N90
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 39 A, 900 V, 220 Mohm Rohs Compliant Ixys Semiconductor - 14J1689 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 39 A, 900 V, 220 Mohm Rohs Compliant Ixys Semiconductor
14J1689
Mosfet Transistor, N Channel, 39 A, 900 V, 220 Mohm Rohs Compliant Ixys Semiconductor 14J1689
MOSFET Transistor, N Channel, 39 A, 900 V, 220 mohm RoHS Compliant: Yes

MOSFET Transistor, N Channel, 39 A, 900 V, 220 mohm RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN39N90 14J1689
Product Name 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Mosfet Transistor, N Channel, 39 A, 900 V, 220 Mohm Rohs Compliant Ixys Semiconductor
Polarity N-Channel N-Channel
V(BR)DSS 900 volts
IDSS 39000 milliamps
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