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Littelfuse, Inc. 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFN360N15T2

Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Features: High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switchingperformance Avalanches capabilities Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Synchronous rectification Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications
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Suppliers

Company
Product
Description
Supplier Links
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFN360N15T2 - Littelfuse, Inc.
Chicago, IL, United States
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFN360N15T2
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXFN360N15T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Features: High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switchingperformance Avalanches capabilities Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Synchronous rectification Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Features: High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switchingperformance Avalanches capabilities Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Synchronous rectification Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

Supplier's Site Datasheet
 - 1258042 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFET 360A 150V SOT227 - Discrete Semiconductors - MOSFET Transistors

MOSFET 360A 150V SOT227 - Discrete Semiconductors - MOSFET Transistors

Supplier's Site
Single FETs, MOSFETs - IXFN360N15T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN360N15T2-ND
Single FETs, MOSFETs IXFN360N15T2-ND
N-Channel 150V 310A (Tc) 1070W (Tc) Chassis Mount SOT-227B

N-Channel 150V 310A (Tc) 1070W (Tc) Chassis Mount SOT-227B

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IXFN360N15T2 1258042 IXFN360N15T2-ND
Product Name 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 150 volts 150 volts
IDSS 310000 milliamps
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