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Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications
MOSFET 360A 100V SOT227 - Discrete Semiconductors - MOSFET Transistors
N-Channel 100V 360A (Tc) 830W (Tc) Chassis Mount SOT-227B
| Littelfuse, Inc. | RS Components, Ltd. | DigiKey | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | IXFN360N10T | 1258041 | IXFN360N10T-ND |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options | Single FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel |
| V(BR)DSS | 100 volts | 100 volts | |
| IDSS | 360000 milliamps |
