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Littelfuse, Inc. 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN32N120

Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density
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Suppliers

Company
Product
Description
Supplier Links
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN32N120 - Littelfuse, Inc.
Chicago, IL, United States
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN32N120
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN32N120
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density

Supplier's Site Datasheet
Mosfet, N-Ch, 1.2Kv, 32A, 150Deg C, 780W; Channel Type Ixys Semiconductor - 38K3182 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 32A, 150Deg C, 780W; Channel Type Ixys Semiconductor
38K3182
Mosfet, N-Ch, 1.2Kv, 32A, 150Deg C, 780W; Channel Type Ixys Semiconductor 38K3182
MOSFET, N-CH, 1.2KV, 32A, 150DEG C, 780W; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:32A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 1.2KV, 32A, 150DEG C, 780W; Channel Type:N Channel; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:32A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN32N120 38K3182
Product Name 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Mosfet, N-Ch, 1.2Kv, 32A, 150Deg C, 780W; Channel Type Ixys Semiconductor
Polarity N-Channel
V(BR)DSS 1200 volts
IDSS 32000 milliamps 32000 milliamps
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