Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control
N-Channel 650V 78A (Tc) 595W (Tc) Chassis Mount SOT-227B
Littelfuse, Inc. | DigiKey | |
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Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
Product Number | IXFN100N65X2 | IXFN100N65X2-ND |
Product Name | 600V - 700V Power MOSFETs with HiPerFET™ Options | Single FETs, MOSFETs |
Polarity | N-Channel | N-Channel |
V(BR)DSS | 650 volts | |
IDSS | 78000 milliamps |