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Littelfuse, Inc. 500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK94N50P2

Description
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Features: Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Applications: SMPS/RMPS, UPS, PFC, DC-DC converters, laser drivers, battery chargers, motor drives, solar inverters, lamp ballasts, robotic and servo control
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Suppliers

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Product
Description
Supplier Links
500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK94N50P2 - Littelfuse, Inc.
Chicago, IL, United States
500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFK94N50P2
500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK94N50P2
Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Features: Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Applications: SMPS/RMPS, UPS, PFC, DC-DC converters, laser drivers, battery chargers, motor drives, solar inverters, lamp ballasts, robotic and servo control

Polar2™ HiPerFET™ versions are offered with drain current ratings of 24, 42, 52, 74, 94 and 120 Amperes. These high-performance versions retain all the features and advantages of the PolarP2™ Standard versions, with the added benefit of a fast intrinsic rectifier for increased turn-off dV/dt immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density. The featured fast intrinsic body diode properties of these HiPerFET™ versions play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness, and higher operating frequencies. Features: Low RDS(on) and Qg Low thermal resistance RthJC High power dissipation Dynamic dv/dt ratings Avalanche Rated Advantages: Simple drive requirements Enables high speed switching Reduced component count & circuit complexity Cooler device operation Applications: SMPS/RMPS, UPS, PFC, DC-DC converters, laser drivers, battery chargers, motor drives, solar inverters, lamp ballasts, robotic and servo control

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFK94N50P2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFK94N50P2-ND
Single FETs, MOSFETs IXFK94N50P2-ND
N-Channel 500V 94A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK)

N-Channel 500V 94A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK)

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IXFK94N50P2 IXFK94N50P2-ND
Product Name 500V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Single FETs, MOSFETs
Polarity N-Channel N-Channel
V(BR)DSS 500 volts
IDSS 94000 milliamps
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