- Trained on our vast library of engineering resources.

Littelfuse, Inc. 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK38N80Q2

Description
Q2 Class HiPerFETâ„¢ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs. Features: International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies Pulse generation Laser drivers Advantages: Easy to mount High power density Space savings
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK38N80Q2 - Littelfuse, Inc.
Chicago, IL, United States
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFK38N80Q2
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK38N80Q2
Q2 Class HiPerFETâ„¢ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs. Features: International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies Pulse generation Laser drivers Advantages: Easy to mount High power density Space savings

Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs. Features: International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies Pulse generation Laser drivers Advantages: Easy to mount High power density Space savings

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK38N80Q2
Product Name 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
Polarity N-Channel
V(BR)DSS 800 volts
IDSS 38000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFA36N20X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 200 volts
IDSS 36000 milliamps
View Details
2 suppliers
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH46N65X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 46000 milliamps
View Details
2 suppliers
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH70N65X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 70000 milliamps
View Details
2 suppliers
Ultrafast low-side SiC-MOSFET and IGBT driver with negative voltage charge pump - IX4351NEAU - Littelfuse, Inc.
Specs
Package Type 16-pin power SOIC with exposed thermal pad
View Details