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Littelfuse, Inc. 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK27N80Q

Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings
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Suppliers

Company
Product
Description
Supplier Links
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK27N80Q - Littelfuse, Inc.
Chicago, IL, United States
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFK27N80Q
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK27N80Q
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFK27N80Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFK27N80Q-ND
Single FETs, MOSFETs IXFK27N80Q-ND
N-Channel 800V 27A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)

N-Channel 800V 27A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)

Supplier's Site Datasheet
 - 7115382 - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) Channel Type = N Maximum Continuous Drain Current = 27 A Maximum Drain Source Voltage = 800 V Maximum Drain Source Resistance = 320 mOhms Maximum Gate Threshold Voltage = 4.5V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TO-264AA Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢)
Channel Type = N
Maximum Continuous Drain Current = 27 A
Maximum Drain Source Voltage = 800 V
Maximum Drain Source Resistance = 320 mOhms
Maximum Gate Threshold Voltage = 4.5V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-264AA
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single

Supplier's Site
 - 7115382P - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) Channel Type = N Maximum Continuous Drain Current = 27 A Maximum Drain Source Voltage = 800 V Maximum Drain Source Resistance = 320 mOhms Maximum Gate Threshold Voltage = 4.5V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TO-264AA Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢)
Channel Type = N
Maximum Continuous Drain Current = 27 A
Maximum Drain Source Voltage = 800 V
Maximum Drain Source Resistance = 320 mOhms
Maximum Gate Threshold Voltage = 4.5V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-264AA
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 9200874 - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) Channel Type = N Maximum Continuous Drain Current = 27 A Maximum Drain Source Voltage = 800 V Maximum Drain Source Resistance = 320 mOhms Maximum Gate Threshold Voltage = 4.5V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TO-264AA Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢)
Channel Type = N
Maximum Continuous Drain Current = 27 A
Maximum Drain Source Voltage = 800 V
Maximum Drain Source Resistance = 320 mOhms
Maximum Gate Threshold Voltage = 4.5V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-264AA
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single

Supplier's Site
Mosfet, N-Ch, 800V, 27A, To-264Aa; Channel Type Ixys Semiconductor - 02AC9808 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 27A, To-264Aa; Channel Type Ixys Semiconductor
02AC9808
Mosfet, N-Ch, 800V, 27A, To-264Aa; Channel Type Ixys Semiconductor 02AC9808
MOSFET, N-CH, 800V, 27A, TO-264AA; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:27A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 800V, 27A, TO-264AA; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:27A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. DigiKey RS Components, Ltd. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK27N80Q IXFK27N80Q-ND 7115382 02AC9808
Product Name 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Single FETs, MOSFETs Mosfet, N-Ch, 800V, 27A, To-264Aa; Channel Type Ixys Semiconductor
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
IDSS 27000 milliamps 27000 milliamps
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