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Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK26N120P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications
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Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK26N120P - Littelfuse, Inc.
Chicago, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFK26N120P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFK26N120P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications

Supplier's Site Datasheet
 - 7115360 - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS Channel Type = N Maximum Continuous Drain Current = 26 A Maximum Drain Source Voltage = 1200 V Maximum Drain Source Resistance = 460 mOhms Maximum Gate Threshold Voltage = 6.5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-264 Mounting Type = Through Hole Transistor Configuration = Single Pin Count = 3

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 26 A
Maximum Drain Source Voltage = 1200 V
Maximum Drain Source Resistance = 460 mOhms
Maximum Gate Threshold Voltage = 6.5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-264
Mounting Type = Through Hole
Transistor Configuration = Single
Pin Count = 3

Supplier's Site
 - 7115360P - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS Channel Type = N Maximum Continuous Drain Current = 26 A Maximum Drain Source Voltage = 1200 V Maximum Drain Source Resistance = 460 mOhms Maximum Gate Threshold Voltage = 6.5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-264 Mounting Type = Through Hole Transistor Configuration = Single Pin Count = 3 Delivery on production packaging - Tube. This product is non-returnable.

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 26 A
Maximum Drain Source Voltage = 1200 V
Maximum Drain Source Resistance = 460 mOhms
Maximum Gate Threshold Voltage = 6.5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-264
Mounting Type = Through Hole
Transistor Configuration = Single
Pin Count = 3
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 9200877 - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS Channel Type = N Maximum Continuous Drain Current = 26 A Maximum Drain Source Voltage = 1200 V Maximum Drain Source Resistance = 460 mOhms Maximum Gate Threshold Voltage = 6.5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-264 Mounting Type = Through Hole Transistor Configuration = Single Pin Count = 3

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 26 A
Maximum Drain Source Voltage = 1200 V
Maximum Drain Source Resistance = 460 mOhms
Maximum Gate Threshold Voltage = 6.5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-264
Mounting Type = Through Hole
Transistor Configuration = Single
Pin Count = 3

Supplier's Site
Single FETs, MOSFETs - IXFK26N120P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFK26N120P-ND
Single FETs, MOSFETs IXFK26N120P-ND
N-Channel 1200V 26A (Tc) 960W (Tc) Through Hole TO-264AA (IXFK)

N-Channel 1200V 26A (Tc) 960W (Tc) Through Hole TO-264AA (IXFK)

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. RS Components, Ltd. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IXFK26N120P 7115360 IXFK26N120P-ND
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 1200 volts 1200 volts
IDSS 26000 milliamps
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