- Trained on our vast library of engineering resources.

Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFK240N25X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFK240N25X3 - Littelfuse, Inc.
Chicago, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFK240N25X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFK240N25X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFK240N25X3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFK240N25X3-ND
Single FETs, MOSFETs IXFK240N25X3-ND
N-Channel 250V 240A (Tc) 1250W (Tc) Through Hole TO-264

N-Channel 250V 240A (Tc) 1250W (Tc) Through Hole TO-264

Supplier's Site Datasheet
Mosfet, N-Ch, 250V, 240A, 1.25Kw; Channel Type Littelfuse - 03AH0656 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 250V, 240A, 1.25Kw; Channel Type Littelfuse
03AH0656
Mosfet, N-Ch, 250V, 240A, 1.25Kw; Channel Type Littelfuse 03AH0656
MOSFET, N-CH, 250V, 240A, 1.25KW; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:240A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 250V, 240A, 1.25KW; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:240A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. DigiKey Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK240N25X3 IXFK240N25X3-ND 03AH0656
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Single FETs, MOSFETs Mosfet, N-Ch, 250V, 240A, 1.25Kw; Channel Type Littelfuse
Polarity N-Channel N-Channel
V(BR)DSS 250 volts
IDSS 240000 milliamps 240000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK20N120P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 1200 volts
IDSS 20000 milliamps
View Details
2 suppliers
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH32N50Q - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 500 volts
IDSS 32000 milliamps
View Details
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH30N85X - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 850 volts
IDSS 30000 milliamps
View Details
2 suppliers
60V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFA270N06T3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 60 volts
IDSS 270000 milliamps
View Details