Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications
N-Channel 300V 120A (Tc) 960W (Tc) Through Hole TO-264AA (IXFK)
Littelfuse, Inc. | DigiKey | |
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Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
Product Number | IXFK120N30T | IXFK120N30T-ND |
Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options | Single FETs, MOSFETs |
Polarity | N-Channel | N-Channel |
V(BR)DSS | 300 volts | |
IDSS | 120000 milliamps |