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Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH98N60X3

Description
The 600V X3-Class Ultra Junction MOSFET IXFH98N60X3 is available in 98A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. They feature the lowest figures of merit (FOM) RDS(on)xQg and RDS(on)xRthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFETâ„¢ series of power MOSFETs feature body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr). Features: Low static losses Well-suited for high frequency applications Simplified thermal design High ruggedness against overvoltage Low gate drive power demand Applications: Power supplies for telecom and server applications in hard- and soft-switching designs Unidirectional and bidirectional DC/DC converter DC-AC converter in mobile application Battery charging circuits
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Suppliers

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Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH98N60X3 - Littelfuse, Inc.
Chicago, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFH98N60X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFH98N60X3
The 600V X3-Class Ultra Junction MOSFET IXFH98N60X3 is available in 98A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. They feature the lowest figures of merit (FOM) RDS(on)xQg and RDS(on)xRthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFETâ„¢ series of power MOSFETs feature body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr). Features: Low static losses Well-suited for high frequency applications Simplified thermal design High ruggedness against overvoltage Low gate drive power demand Applications: Power supplies for telecom and server applications in hard- and soft-switching designs Unidirectional and bidirectional DC/DC converter DC-AC converter in mobile application Battery charging circuits

The 600V X3-Class Ultra Junction MOSFET IXFH98N60X3 is available in 98A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. They feature the lowest figures of merit (FOM) RDS(on)xQg and RDS(on)xRthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET™ series of power MOSFETs feature body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr). Features: Low static losses Well-suited for high frequency applications Simplified thermal design High ruggedness against overvoltage Low gate drive power demand Applications: Power supplies for telecom and server applications in hard- and soft-switching designs Unidirectional and bidirectional DC/DC converter DC-AC converter in mobile application Battery charging circuits

Supplier's Site Datasheet
Single FETs, MOSFETs - 5656-IXFH98N60X3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
5656-IXFH98N60X3-ND
Single FETs, MOSFETs 5656-IXFH98N60X3-ND
N-Channel 600V 98A (Tc) 960W (Tc) Through Hole TO-247 (IXTH)

N-Channel 600V 98A (Tc) 960W (Tc) Through Hole TO-247 (IXTH)

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IXFH98N60X3 5656-IXFH98N60X3-ND
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Single FETs, MOSFETs
Polarity N-Channel N-Channel
V(BR)DSS 600 volts
IDSS 98000 milliamps
rDS(on) 0.0300 ohms
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