- Trained on our vast library of engineering resources.

Littelfuse, Inc. 600V - 700V Power MOSFETs with HiPerFET™ Options IXFH80N65X2-4

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V - 700V Power MOSFETs with HiPerFET™ Options - IXFH80N65X2-4 - Littelfuse, Inc.
Chicago, IL, United States
600V - 700V Power MOSFETs with HiPerFET™ Options
IXFH80N65X2-4
600V - 700V Power MOSFETs with HiPerFET™ Options IXFH80N65X2-4
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFH80N65X2-4-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH80N65X2-4-ND
Single FETs, MOSFETs IXFH80N65X2-4-ND
N-Channel 650V 80A (Tc) 890W (Tc) Through Hole TO-247-4L

N-Channel 650V 80A (Tc) 890W (Tc) Through Hole TO-247-4L

Supplier's Site Datasheet
 - 1464237 - RS Components, Ltd.
Corby, Northants, United Kingdom
Ultra junction MOSFET 80A 650V TO247 - Discrete Semiconductors - MOSFET Transistors

Ultra junction MOSFET 80A 650V TO247 - Discrete Semiconductors - MOSFET Transistors

Supplier's Site
 - 1464385 - RS Components, Ltd.
Corby, Northants, United Kingdom
Ultra junction MOSFET 80A 650V TO247 - Discrete Semiconductors - MOSFET Transistors

Ultra junction MOSFET 80A 650V TO247 - Discrete Semiconductors - MOSFET Transistors

Supplier's Site

Technical Specifications

  Littelfuse, Inc. DigiKey RS Components, Ltd.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH80N65X2-4 IXFH80N65X2-4-ND 1464237
Product Name 600V - 700V Power MOSFETs with HiPerFET™ Options Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 650 volts 650 volts
IDSS 80000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN140N30P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 300 volts
IDSS 110000 milliamps
View Details
4 suppliers
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFA36N30P3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 300 volts
IDSS 36000 milliamps
View Details
2 suppliers
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFA18N60X - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 18000 milliamps
View Details
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK26N120P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 1200 volts
IDSS 26000 milliamps
View Details
3 suppliers