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Littelfuse, Inc. 600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs IXFH80N60X2A

Description
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH80N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. Features: International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Benefits: High Power Density Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls
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600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs - IXFH80N60X2A - Littelfuse, Inc.
Chicago, IL, United States
600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs
IXFH80N60X2A
600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs IXFH80N60X2A
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH80N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. Features: International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Benefits: High Power Density Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls

With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH80N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. Features: International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Benefits: High Power Density Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls

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Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH80N60X2A
Product Name 600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs
V(BR)DSS 600 volts
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