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Littelfuse, Inc. 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH75N10

Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density
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Suppliers

Company
Product
Description
Supplier Links
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH75N10 - Littelfuse, Inc.
Chicago, IL, United States
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH75N10
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH75N10
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density

Supplier's Site Datasheet
Mosfet, N, To-247; Transistor Polarity Ixys Semiconductor - 38K3177 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-247; Transistor Polarity Ixys Semiconductor
38K3177
Mosfet, N, To-247; Transistor Polarity Ixys Semiconductor 38K3177
MOSFET, N, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:75A; On Resistance Rds(on):0.02ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4VRoHS Compliant: Yes

MOSFET, N, TO-247; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:75A; On Resistance Rds(on):0.02ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4VRoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH75N10 38K3177
Product Name 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Mosfet, N, To-247; Transistor Polarity Ixys Semiconductor
Polarity N-Channel
V(BR)DSS 100 volts
IDSS 75000 milliamps 75000 milliamps
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