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Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH69N30P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications
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Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH69N30P - Littelfuse, Inc.
Chicago, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH69N30P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH69N30P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFH69N30P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH69N30P-ND
Single FETs, MOSFETs IXFH69N30P-ND
N-Channel 300V 69A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 300V 69A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)

Supplier's Site Datasheet
 - 193543 - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS Channel Type = N Maximum Continuous Drain Current = 69 A Maximum Drain Source Voltage = 300 V Maximum Drain Source Resistance = 49 mOhms Maximum Gate Threshold Voltage = 5V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TO-247 Mounting Type = Through Hole Transistor Configuration = Single Pin Count = 3

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 69 A
Maximum Drain Source Voltage = 300 V
Maximum Drain Source Resistance = 49 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-247
Mounting Type = Through Hole
Transistor Configuration = Single
Pin Count = 3

Supplier's Site
 - 193543P - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS Channel Type = N Maximum Continuous Drain Current = 69 A Maximum Drain Source Voltage = 300 V Maximum Drain Source Resistance = 49 mOhms Maximum Gate Threshold Voltage = 5V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TO-247 Mounting Type = Through Hole Transistor Configuration = Single Pin Count = 3 Delivery on production packaging - Tube. This product is non-returnable.

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 69 A
Maximum Drain Source Voltage = 300 V
Maximum Drain Source Resistance = 49 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TO-247
Mounting Type = Through Hole
Transistor Configuration = Single
Pin Count = 3
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site

Technical Specifications

  Littelfuse, Inc. DigiKey RS Components, Ltd.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH69N30P IXFH69N30P-ND 193543
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 300 volts 300 volts
IDSS 69000 milliamps
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