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Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH36N60P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications
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Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH36N60P - Littelfuse, Inc.
Chicago, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH36N60P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH36N60P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Features: International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages: Easy to Mount Space Savings Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFH36N60P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH36N60P-ND
Single FETs, MOSFETs IXFH36N60P-ND
N-Channel 600V 36A (Tc) 650W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 600V 36A (Tc) 650W (Tc) Through Hole TO-247AD (IXFH)

Supplier's Site Datasheet
 - 194467 - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS Channel Type = N Maximum Continuous Drain Current = 36 A Maximum Drain Source Voltage = 600 V Maximum Drain Source Resistance = 190 mOhms Maximum Gate Threshold Voltage = 5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-247 Mounting Type = Through Hole Transistor Configuration = Single Pin Count = 3

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 36 A
Maximum Drain Source Voltage = 600 V
Maximum Drain Source Resistance = 190 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-247
Mounting Type = Through Hole
Transistor Configuration = Single
Pin Count = 3

Supplier's Site
 - 194467P - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS Channel Type = N Maximum Continuous Drain Current = 36 A Maximum Drain Source Voltage = 600 V Maximum Drain Source Resistance = 190 mOhms Maximum Gate Threshold Voltage = 5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-247 Mounting Type = Through Hole Transistor Configuration = Single Pin Count = 3 Delivery on production packaging - Tube. This product is non-returnable.

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 36 A
Maximum Drain Source Voltage = 600 V
Maximum Drain Source Resistance = 190 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-247
Mounting Type = Through Hole
Transistor Configuration = Single
Pin Count = 3
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 9200763 - RS Components, Ltd.
Corby, Northants, United Kingdom
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS Channel Type = N Maximum Continuous Drain Current = 36 A Maximum Drain Source Voltage = 600 V Maximum Drain Source Resistance = 190 mOhms Maximum Gate Threshold Voltage = 5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-247 Mounting Type = Through Hole Transistor Configuration = Single Pin Count = 3

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢) from IXYS
Channel Type = N
Maximum Continuous Drain Current = 36 A
Maximum Drain Source Voltage = 600 V
Maximum Drain Source Resistance = 190 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-247
Mounting Type = Through Hole
Transistor Configuration = Single
Pin Count = 3

Supplier's Site
Mosfet, N, To-247; Channel Type Ixys Semiconductor - 58M7600 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-247; Channel Type Ixys Semiconductor
58M7600
Mosfet, N, To-247; Channel Type Ixys Semiconductor 58M7600
MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:650W RoHS Compliant: Yes

MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:650W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. DigiKey RS Components, Ltd. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH36N60P IXFH36N60P-ND 194467 58M7600
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Single FETs, MOSFETs Mosfet, N, To-247; Channel Type Ixys Semiconductor
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
IDSS 36000 milliamps 36000 milliamps
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