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Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH28N60P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control
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Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH28N60P3 - Littelfuse, Inc.
Chicago, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH28N60P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH28N60P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFH28N60P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH28N60P3-ND
Single FETs, MOSFETs IXFH28N60P3-ND
N-Channel 600V 28A (Tc) 695W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 600V 28A (Tc) 695W (Tc) Through Hole TO-247AD (IXFH)

Supplier's Site Datasheet
 - 8024379 - RS Components, Ltd.
Corby, Northants, United Kingdom
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) Channel Type = N Maximum Continuous Drain Current = 28 A Maximum Drain Source Voltage = 600 V Maximum Drain Source Resistance = 260 mOhms Maximum Gate Threshold Voltage = 5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single

A range of IXYS Polar3â„¢ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢)
Channel Type = N
Maximum Continuous Drain Current = 28 A
Maximum Drain Source Voltage = 600 V
Maximum Drain Source Resistance = 260 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single

Supplier's Site
 - 8024379P - RS Components, Ltd.
Corby, Northants, United Kingdom
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) Channel Type = N Maximum Continuous Drain Current = 28 A Maximum Drain Source Voltage = 600 V Maximum Drain Source Resistance = 260 mOhms Maximum Gate Threshold Voltage = 5V Maximum Gate Source Voltage = -30 V, +30 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

A range of IXYS Polar3â„¢ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFETâ„¢)
Channel Type = N
Maximum Continuous Drain Current = 28 A
Maximum Drain Source Voltage = 600 V
Maximum Drain Source Resistance = 260 mOhms
Maximum Gate Threshold Voltage = 5V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-247
Mounting Type = Through Hole
Pin Count = 3
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
Mosfet, N-Ch, 600V, 28A, 150Deg C, 695W; Channel Type Ixys Semiconductor - 68X2860 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 28A, 150Deg C, 695W; Channel Type Ixys Semiconductor
68X2860
Mosfet, N-Ch, 600V, 28A, 150Deg C, 695W; Channel Type Ixys Semiconductor 68X2860
MOSFET, N-CH, 600V, 28A, 150DEG C, 695W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:28A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 28A, 150DEG C, 695W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:28A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. DigiKey RS Components, Ltd. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH28N60P3 IXFH28N60P3-ND 8024379 68X2860
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Single FETs, MOSFETs Mosfet, N-Ch, 600V, 28A, 150Deg C, 695W; Channel Type Ixys Semiconductor
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
IDSS 28000 milliamps 28000 milliamps
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