- Trained on our vast library of engineering resources.
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs. Features: International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies Pulse generation Laser drivers Advantages: Easy to mount High power density Space savings
MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:500W; MSL:-RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH14N100Q2 | 38K3167 |
| Product Name | 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N, To-247; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | |
| V(BR)DSS | 1000 volts | |
| IDSS | 14000 milliamps | 14000 milliamps |
