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Littelfuse, Inc. 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH12N100

Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density
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Suppliers

Company
Product
Description
Supplier Links
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH12N100 - Littelfuse, Inc.
Chicago, IL, United States
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH12N100
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH12N100
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Features: International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC Motor Drives Temperature and Lighting Controls Advantages: Easy to mount Space savings High power density

Supplier's Site Datasheet
Mosfet, N-Ch, 1Kv, 12A, 150Deg C, 300W; Channel Type Ixys Semiconductor - 97K2538 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1Kv, 12A, 150Deg C, 300W; Channel Type Ixys Semiconductor
97K2538
Mosfet, N-Ch, 1Kv, 12A, 150Deg C, 300W; Channel Type Ixys Semiconductor 97K2538
MOSFET, N-CH, 1KV, 12A, 150DEG C, 300W; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 1KV, 12A, 150DEG C, 300W; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH12N100 97K2538
Product Name 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Mosfet, N-Ch, 1Kv, 12A, 150Deg C, 300W; Channel Type Ixys Semiconductor
Polarity N-Channel
V(BR)DSS 1000 volts
IDSS 12000 milliamps 12000 milliamps
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