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Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH110N25T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications
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Suppliers

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Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFH110N25T - Littelfuse, Inc.
Chicago, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFH110N25T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH110N25T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFH110N25T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH110N25T-ND
Single FETs, MOSFETs IXFH110N25T-ND
N-Channel 250V 110A (Tc) 694W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 250V 110A (Tc) 694W (Tc) Through Hole TO-247AD (IXFH)

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IXFH110N25T IXFH110N25T-ND
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options Single FETs, MOSFETs
Polarity N-Channel N-Channel
V(BR)DSS 250 volts
IDSS 110000 milliamps
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