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Littelfuse, Inc. 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFB90N85X

Description
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonant-mode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control
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Product
Description
Supplier Links
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFB90N85X - Littelfuse, Inc.
Chicago, IL, United States
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFB90N85X
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFB90N85X
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonant-mode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonant-mode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Supplier's Site
Single FETs, MOSFETs - IXFB90N85X-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFB90N85X-ND
Single FETs, MOSFETs IXFB90N85X-ND
N-Channel 850V 90A (Tc) 1785W (Tc) Through Hole PLUS264™

N-Channel 850V 90A (Tc) 1785W (Tc) Through Hole PLUS264™

Supplier's Site Datasheet
 - 1464383 - RS Components, Ltd.
Corby, Northants, United Kingdom
Ultra junction MOSFET 90A 850V PLUS264 - Discrete Semiconductors - MOSFET Transistors

Ultra junction MOSFET 90A 850V PLUS264 - Discrete Semiconductors - MOSFET Transistors

Supplier's Site
 - 1464246 - RS Components, Ltd.
Corby, Northants, United Kingdom
Ultra junction MOSFET 90A 850V PLUS264 - Discrete Semiconductors - MOSFET Transistors

Ultra junction MOSFET 90A 850V PLUS264 - Discrete Semiconductors - MOSFET Transistors

Supplier's Site

Technical Specifications

  Littelfuse, Inc. DigiKey RS Components, Ltd.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFB90N85X IXFB90N85X-ND 1464383
Product Name 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 850 volts 850 volts
IDSS 90000 milliamps
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